? 2004 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 500 v v gs continuous 30 v v gsm transient 40 v i d25 t c = 25 c40a i dm t c = 25 c, pulse width limited by t jm 160 a i ar t c = 25 c40a e ar t c = 25 c 50mj e as 2.0 mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 500 w t j -55 to +150 c t jm 150 c t stg -55 to +150 c t l 1.6 mm (0.063 in) from case for 10 s 300 c m d mounting torque 1.13/10 nm/lb.in. weight 6 g n-channel enhancement mode avalanche rated, low q g , high dv/dt features z ixys advanced low q g process z low gate charge and capacitances - easier to drive - faster switching z international standard packages z low r ds (on) z rated for unclamped inductive load switching (uis) rated z molding epoxies meet ul 94 v-0 flammability classification advantages z easy to mount z space savings z high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 500 v v gs(th) v ds = v gs , i d = 4 ma 2.5 4.5 v i gss v gs = 30 v dc , v ds = 0 100 na i dss v ds = v dss t j = 25 c25 a v gs = 0 v t j = 125 c1ma r ds(on) v gs = 10 v, i d = 0.5 i d25 0.16 ? pulse test, t 300 s, duty cycle d 2 % g = gate d = drain s = source tab = drain high current power mosfet q-class v dss = 500 v i d25 = 40 a r ds(on) = 0.16 ? ? ? ? ? ixtq 40n50q ds99056a(08/04) data sheet to-3p (ixtq) g d s (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixtq 40n50q ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 0.5 ? i d25 , pulse test 22 35 s c iss 4500 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 700 pf c rss 180 pf t d(on) 17 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 20 ns t d(off) r g = 2.0 ? (external), 56 n s t f 14 ns q g(on) 130 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 26 nc q gd 58 nc r thjc 0.25 k/w r thck 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 40 a i sm repetitive; pulse width limited by t jm 160 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr 600 ns to-3p (ixtq) outline
? 2004 ixys all rights reserved ixtq 40n50q fig. 2. extended output characteristics @ 25 deg. c 0 10 20 30 40 50 60 70 80 90 036912151821 v ds - volts i d - amperes v g s = 1 0v 5v 6v 7v fig. 3. output characteristics @ 125 deg. c 0 5 10 15 20 25 30 35 40 0 3 6 9 12 15 v ds - volts i d - amperes v g s = 1 0v 7v 5v 6v fig. 1. output characteristics @ 25 deg. c 0 5 10 15 20 25 30 35 40 0 123 4567 v ds - volts i d - amperes v g s = 1 0v 7v 5v 6v fig. 4. r ds(on) normalized to i d25 value vs. junction temperature 0.4 0.7 1 1. 3 1. 6 1. 9 2.2 2.5 2.8 -50 -25 0 25 50 75 100 125 150 t j - degr ees centigr ade r d s (on) - normalize d i d = 40a i d = 20a v g s = 1 0v fig. 6. drain current vs. case t emperature 0 10 20 30 40 50 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) normalized to i d25 value vs. i d 0.7 1 1. 3 1. 6 1. 9 2.2 2.5 2.8 3.1 0 10 20304050607080 i d - amperes r d s (on) - normalize d t j = 1 25 o c t j = 25 o c v g s = 1 0v
ixys reserves the right to change limits, test conditions, and dimensions. ixtq 40n50q ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 fig. 11. capacitance 10 0 1000 10000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - p f c iss c oss c rss f = 1 m hz fig. 10. gate charge 0 2 4 6 8 10 0 204060 80100120140 q g - nanocoulombs v g s - volts v d s = 250v i d = 20a i g = 1 0ma fig. 7. input admittance 0 10 20 30 40 50 60 70 80 3.5 4 4.5 5 5.5 6 6.5 7 v gs - volts i d - amperes t j = 1 20 o c 25 o c -40 o c fig. 12. maximum t ransient t hermal resistance 0.01 0.1 1 1 10 100 1000 pulse width - milliseconds r (th) j c - (oc/w) fig. 8. transconductance 0 10 20 30 40 50 60 70 0 10 203040 50607080 i d - amperes g f s - siemens t j = -40 o c 25 o c 1 25 o c fig. 9. source current vs. source-to-drain voltage 0 20 40 60 80 10 0 12 0 0.4 0.6 0.8 1 1.2 v sd - volts i s - amperes t j = 1 25 o c t j = 25 o c
|
